PHOTOELECTRIC ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A photoelectric device and a manufacturing method thereof are provided to improve reliability by minimizing a leakage current due to crystal defect and a current crowding phenomenon. CONSTITUTION: A first semiconductor layer(122) is formed into a nitride semiconductor and is formed on a base substrate. Droplet is formed on the first semiconductor layer corresponding to crystal defect created between the base substrate and the first semiconductor layer. A second semiconductor layer(140) is formed into a nitride semiconductor in which a first impurity is doped and is formed on the first semiconductor layer. A photoelectric layer(150) is formed into a nitride semiconductor of a quantum well structure and is formed on the second semiconductor layer. A third semiconductor layer is formed into a nitride semiconductor in which a second impurity is doped and is formed on the photoelectric layer.