METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND RADIO FREQUENCY DEVICE
摘要
PURPOSE: A method for manufacturing a radio frequency device and a semiconductor device is provided to reduce radio frequency loss by preventing by forming an inversion blocking layer. CONSTITUTION: A complex substrate having a laminating structure of a body, a buried insulating layer(104), and a semiconductor layer is provided. A trench is formed by etching the buried insulating layer and the semiconductor layer. An inversion blocking layer(120) is formed on the body within the trench. A burying protective layer(122) is formed on the inversion blocking layer in order to fill the trench. A first part of the inversion blocking layer of the semiconductor layer outside the trench is eliminated. The burying protective layer and the inversion blocking layer are flattered in order to protect a second part of the inversion blocking layer within the trench through the burying protective layer.
申请公布号
KR20120054459(A)
申请公布日期
2012.05.30
申请号
KR20100115846
申请日期
2010.11.19
申请人
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人
LEE, KEE SUNG;LIM, BU TAEK;YU, DONG EUN;LEE, DONG WOOK;KIM, HAN HEUNG;HONG, DAE WON;HWANG, WOOK JEUNG