| 摘要 |
<p>A light-emitting diode element of the present invention includes: an n-type conductive layer 2 having a principal surface and a rear surface, the n-type conductive layer 2 being made of a gallium nitride-based compound, the principal surface being an m -plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3 interposed between the n-type conductive layer 2 and the p-type conductive layer 4; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.</p> |
