发明名称 |
Nonvolatile semiconductor memory and data reading method |
摘要 |
A nonvolatile semiconductor memory that includes a memory cell array including a plurality of electrically writable memory cells; a plurality of word lines and a plurality of bit lines connected to the plurality of memory cells; and a data reading and programming control section. The data reading and programming control section includes: an adjacent memory cell data reading section; an adjacent memory cell data memory section; a reading voltage level control section; a data reading section for reading the data from a first memory cell at a plurality of reading voltages corresponding to a plurality of predetermined reading voltage verify levels controlled using the reading voltage level control section; and a data determining section for determining which data of 4-value data is programmed in the first memory cell based on the data which is read by the data reading section. |
申请公布号 |
US8189395(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20100916856 |
申请日期 |
2010.11.01 |
申请人 |
SHIGA HITOSHI;FUJIMURA SUSUMU;SHINDO YOSHIHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIGA HITOSHI;FUJIMURA SUSUMU;SHINDO YOSHIHIKO |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|