发明名称 HIGH-RESOLUTION MAGNETIC FIELD SENSOR INTEGRAL WITH A SILICON BEAM RESONANT STRUCTURE MANUFACTURED IN MEMS TECHNOLOGY.
摘要 The invention refers to a magnetic field in MEMS technology which uses the Principle of Lorentz force for measuring the small magnetic fields (40 ÁT-2000 ÁT) with a high resolution (43 nT). This sensor has a linear response and a quality factor of Q=96.60 and a magnetic sensitivity of 1.94 VT-1. Furthermore, this sensor has a simple and compact structure, which is relatively easily manufactured and used in novel applications where tiny (of the micrometres order) sensors are required, of small weight, low power consumption and with a high resolution. The invention has the purpose of providing an improved resonant structure of silicon beams, which may detect the linear shape of small magnetic fields. In addition, the invention may be used in emerging applications that require measuring magnetic fields with high resolution and without using compensation circuits for compensating the nonlinearity problems. The sensor has a simple detection mechanism which consists in a Wheatstone bridge o f piezoresistors of the p type.
申请公布号 MX2010013040(A) 申请公布日期 2012.05.29
申请号 MX20100013040 申请日期 2010.11.29
申请人 UNIVERSIDAD VERACRUZANA 发明人 PEDRO GARCIA RAMIREZ;AGUSTIN LEOBARDO HERRERA MAY;JAIME MARTINEZ CASTILLO;ANGEL SAUCEDA CARVAJAL;LEANDRO GARCIA GONZALEZ;JULIAN HERNANDEZ TORRES
分类号 G01R33/028;G01P15/08;G01R33/038 主分类号 G01R33/028
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