发明名称 |
Write once read only memory employing charge trapping in insulators |
摘要 |
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor having a first source/drain region, a second source/drain region, a channel region between the first and the second source/drain regions, and a gate separated from the channel region by a gate insulator. A plug couples the first source/drain region to an array plate. A bitline is coupled to the second source/drain region. The MOSFET can be programmed by operation in a reverse direction trapping charge in the gate insulator adjacent to the first source/drain region such that the programmed MOSFET operates at reduced drain source current when read in a forward direction. |
申请公布号 |
US8188533(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20090622679 |
申请日期 |
2009.11.20 |
申请人 |
FORBES LEONARD;MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD |
分类号 |
H01L29/788;G11C16/04;G11C16/28;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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