| 摘要 |
PURPOSE: A vertical type semiconductor light emitting device is provided to control a massed-phenomenon of a current by uniformly injecting the current to an active layer area. CONSTITUTION: A first electrode is located on a substrate. A first conductivity semiconductor layer is located on the first electrode. An active layer(320) is located on the first conductivity semiconductor layer. A second conductivity semiconductor layer is located on the active layer. A current dispersion layer(500) is located within the second conductivity semiconductor layer. The current dispersion layer is an insulated semiconductor layer. The insulated semiconductor layer comprises n-type dopant and p-type dopant. A second electrode is located on the second conductivity semiconductor layer. |
