| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent a tRCD fail by supplying a stable boosting voltage in a cell which is located in the end of the word line driver. CONSTITUTION: A mat(MAT) includes a word line. A word line driving unit selectively drives a main word line and a word line corresponding to a driving signal in response to a first selection signal. A voltage supply unit(100-130) is opposite to the word line driving unit based on the mat and supplies a word line driving voltage to a word line in an active operation. A voltage supply unit selectively supplies a word line driving voltage to the main word line and the word line by a second selection signal and a third selection signal. |
