发明名称 Workpiece patterning with plasma sheath modulation
摘要 Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may be rotated in between etching or sputtering steps to form pyramids. Regions of the workpiece also may be etched or sputtered with ions formed from a plasma adjusted by an insulating modifier and doped. A metal layer may be formed on these doped regions.
申请公布号 US8187979(B2) 申请公布日期 2012.05.29
申请号 US20090646407 申请日期 2009.12.23
申请人 RAMAPPA DEEPAK A.;GODET LUDOVIC;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 RAMAPPA DEEPAK A.;GODET LUDOVIC
分类号 H01L31/18 主分类号 H01L31/18
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