发明名称 Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
摘要 A method for forming a microcrystalline semiconductor film over a base formed of a different material, which has high crystallinity in the entire film and at an interface with the base, is proposed. Further, a method for manufacturing a thin film transistor including a microcrystalline semiconductor film with high crystallinity is proposed. Furthermore, a method for manufacturing a photoelectric conversion device including a microcrystalline semiconductor film with high crystallinity is proposed. By forming crystal nuclei with high density and high crystallinity over a base film and then growing crystals in a semiconductor from the crystal nuclei, a microcrystalline semiconductor film which has high crystallinity at an interface with the base film, which has high crystallinity in crystal grains, and which has high adhesion between the adjacent crystal grains is formed.
申请公布号 US8187956(B2) 申请公布日期 2012.05.29
申请号 US20080277378 申请日期 2008.11.25
申请人 JINBO YASUHIRO;MIYAIRI HIDEKAZU;DAIRIKI KOJI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 JINBO YASUHIRO;MIYAIRI HIDEKAZU;DAIRIKI KOJI
分类号 C30B25/00;H01L21/20 主分类号 C30B25/00
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