发明名称 ELECTROPLATING SOLUSIONS AND ELECTROPLATING PROCESS FOR SEMICONDUCTORS
摘要 PURPOSE: An electroplating solution and an electroplating method for semiconductors are provided to bury copper in a groove or hole through electroplating without voids. CONSTITUTION: An electroplating solution for semiconductors comprises hydrogen atom or methyl, an element selected from lithium, sodium, and potassium, or ammonium or univalent aluminum. The electroplating solution also includes polyethylene glycol or the copolymer compound of polyethylene oxide and propylene oxide.
申请公布号 KR20120053933(A) 申请公布日期 2012.05.29
申请号 KR20100134747 申请日期 2010.12.24
申请人 CHIRACOL CO., LTD. 发明人 SHIBATA TOSHIHIRO
分类号 C25D3/38;C25D7/06;C25D7/12 主分类号 C25D3/38
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