发明名称 |
Semiconductor memory device, test method thereof and semiconductor device |
摘要 |
A semiconductor memory device comprises a memory cell array having memory cells including a plurality of memory cells, and also comprises a first bit line, a first sense amplifier circuit and a control circuit. A signal is read out from a selected memory cell of the memory cell array through the first bit line. The first sense amplifier circuit has a single-ended configuration and includes an amplifying element amplifying a signal voltage of the first bit line so as to convert the signal voltage into an output current. The control circuit controls a test operation to measure a current flowing in the first sense amplifier circuit independently of currents flowing in other circuit portions. |
申请公布号 |
US8189413(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20090549184 |
申请日期 |
2009.08.27 |
申请人 |
YOSHIDA SOICHIRO;ELPIDA MEMORY, INC. |
发明人 |
YOSHIDA SOICHIRO |
分类号 |
G11C29/00;G11C7/00;G11C7/02 |
主分类号 |
G11C29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|