发明名称 |
Single event upset hardened static random access memory cell |
摘要 |
A single event upset (SEU) hardened memory cell to be utilized in static random access memories is disclosed. The SEU hardened memory cell includes a first transistor, a second transistor and a first resistor connected between a source of the first transistor and a drain of the second transistor. The SEU hardened memory cell also includes a third transistor, a fourth transistor and a second resistor connected between a source of the third transistor and a drain of the fourth transistor. The first resistor is also connected between a gate of the third transistor and the drain of the second transistor. The second resistor is also connected between a gate of the first transistor and the drain of the fourth transistor. |
申请公布号 |
US8189367(B1) |
申请公布日期 |
2012.05.29 |
申请号 |
US20080028042 |
申请日期 |
2008.02.08 |
申请人 |
LAWSON DAVID C.;ROSS JASON F.;BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
发明人 |
LAWSON DAVID C.;ROSS JASON F. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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