发明名称 Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same
摘要 A capacitor structure in trench structures of a semiconductor device includes conductive regions made of metallic and/or semiconducting materials. The conducting regions are surrounded by a dielectric and form stacked layers in the trench structure of the semiconductor device.
申请公布号 US8187947(B2) 申请公布日期 2012.05.29
申请号 US20100827035 申请日期 2010.06.30
申请人 MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT;INFINEON TECHNOLOGIES AG 发明人 MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT
分类号 H01L21/02 主分类号 H01L21/02
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