发明名称 |
Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same |
摘要 |
A capacitor structure in trench structures of a semiconductor device includes conductive regions made of metallic and/or semiconducting materials. The conducting regions are surrounded by a dielectric and form stacked layers in the trench structure of the semiconductor device. |
申请公布号 |
US8187947(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20100827035 |
申请日期 |
2010.06.30 |
申请人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT;INFINEON TECHNOLOGIES AG |
发明人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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