| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve a read and write speed of flash data by copying flash data in DRAM. CONSTITUTION: A nonvolatile memory flash(CHP1) has a first read time. A random access memory DRAM(CHIP3) has a second read time shorter than the first read time. A control circuit is combined with FLASH and DRAM and controls access thereof. A plurality of input and output terminals are combined with the circuit.
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| 申请公布号 |
KR20120054000(A) |
申请公布日期 |
2012.05.29 |
| 申请号 |
KR20120043686 |
申请日期 |
2012.04.26 |
| 申请人 |
KABUSHIKI KAISHA HITACHI SEISAKUSHO(D |
发明人 |
MIURA SEIJI;AYUKAWA KAZUSHIGE |
| 分类号 |
G06F12/16;G11C16/02;G06F3/06;G06F12/00;G06F12/06;G11C5/02;G11C7/10;G11C8/00;G11C11/00;G11C11/40;G11C11/401;G11C11/406;G11C11/407;G11C11/412;G11C16/04;G11C16/10;G11C16/32 |
主分类号 |
G06F12/16 |
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