| 摘要 |
A thin film transistor is provided to increase the stability and secure the device characteristic without the compensating circuit by forming the source and drain with the conductive oxide materials and the metal layer with low resistance. A thin film transistor comprises the gate(42), the gate isolation layer(44), the channel layer(46), the source(52a), and the drain(52b). The gate isolation layer is contacted with the gate. The channel layer is contacted with the gate isolation layer. The channel layer is in opposite directions to the gate. The gate isolation layer is positioned between the channel layer and the gate. The source is contacted with one end of the channel layer. The drain is contacted with the other end of the channel layer. The channel layer is the amorphous oxide semiconductor layer. The source and the drain are formed by including the conductive oxide layer and the metal layer with low resistance.
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