发明名称 System and method for reading flash memory cells
摘要 A memory system includes an array of X memory cells that each includes Y storage regions. The system also includes a read module that receives a first read signal that includes a first read signal data component and a first read signal interference component from a first one of the Y storage regions. The read module also receives a second read signal from a second one of the Y storage regions. The first interference component includes interference from the second one of the Y storage regions. The system also includes a data detection module that recovers the first read signal data component from the first read signal based on the second read signal and one or more of M noiseless signal estimates. M and X are integers greater than or equal to one, and Y is an integer greater than or equal to two.
申请公布号 US8189381(B1) 申请公布日期 2012.05.29
申请号 US20080194133 申请日期 2008.08.19
申请人 YANG XUESHI;WU ZINING;MARVELL INTERNATIONAL LTD. 发明人 YANG XUESHI;WU ZINING
分类号 G11C16/04 主分类号 G11C16/04
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