发明名称 |
Hybrid gap-fill approach for STI formation |
摘要 |
A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material. |
申请公布号 |
US8187948(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20080032962 |
申请日期 |
2008.02.18 |
申请人 |
CHEN NENG-KUO;CHANG CHIH-HSIANG;TZENG KUO-HWA;TSAI CHENG-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN NENG-KUO;CHANG CHIH-HSIANG;TZENG KUO-HWA;TSAI CHENG-YUAN |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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