| 摘要 |
1,079,033. Semi-conductor laser diode. NATIONAL RESEARCH DEVELOPMENT CORPORATION. June 4, 1964 [June 5, 1963], No. 22457/63. Headings H1C and H1K. Molybdenum stud heat sink 4 is provided with a conductive layer of gold and zinc and secured to the P-type region 1 of a laser diode while molybdenum stud heat sink 5 is provided with a conductive layer of gold and tin and secured to the N-type region 2. The diode which may be of gallium arsenide or phosphide is gold plated 6 around the base of each stud to within 100Á of the junction 3 which is left free. The sides of the diode are coated one at a time, a wire being used to cover up the N-P junction. The wire is accurately located by passing current through the diode so that it emits radiation from the junction and positioning the wire between the junction and a silicon photo-cell so as to cut-off completely the radiation to the photo-cell. The plating improves heat flow from the junction. |
