发明名称 WAFER PROCESSING FOR GALLIUM NITRIDE BULK
摘要 A wafer processing method for a gallium nitride bulk is provided to improve a wafer processing efficiency by joining a plurality of the gallium nitride rear films into the bulk type and multiple-cutting the rear films. A gallium nitride bulk(150) is formed by arranging and joining a plurality of gallium nitride rear films. The joined gallium nitride bulk is cut into the plurality of gallium nitride films by a multiple cutting device like a plurality of wire saws. The gallium nitride is coupled through at least one dummy plate.
申请公布号 KR101149305(B1) 申请公布日期 2012.05.25
申请号 KR20070073942 申请日期 2007.07.24
申请人 发明人
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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