| 摘要 |
An apparatus of manufacturing a GaN substrate and a method of manufacturing the same are provided to apply a static or active magnetic field to a polar direction, using a magnetic unit, and to apply the magnetic field to a direction horizontal to the GaN substrate and a cylindrical direction so as to prevent propagation of a potential defect and to remove polarity. An apparatus of manufacturing a GaN substrate(100) has a magnetic unit(200) for generating a static or active magnetic field(210) at a reactor where a GaN layer grows and for applying the static or active magnetic field to the GaN substrate. The GaN layer grows to a direction. A position switching part(400) changes a position of the magnetic unit according to directions vertical to a C surface .
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