| 摘要 |
A method for forming a storage node contact in a semiconductor device is provided to solve a mask patterning problem and to secure an overlay margin with a subsequent storage node by forming a storage node contact as a line type and extending an upper width of the storage node contact. A bit line pattern(16) is formed on an upper portion of a semiconductor substrate(11) where a landing plug contact(13) is formed. Interlayer dielectrics(12,14,15) are formed until the space between the bit line patterns is gap-filled. A mask pattern is formed on the interlayer dielectrics. First dry etching, wet etching, and second dry etching are sequentially performed on the interlayer dielectrics by using the mask pattern as an etch mask until the surface of the landing plug contact is opened to form a storage node contact hole(19). The width of the upper portion of the storage node contact hole is wider than that of the lower portion thereof. A storage node contact is formed to gap-fill the storage node contact hole.
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