| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor chip capable of obtaining improved beam emission efficiency, that is, improved beam strength per employed electric power output unit. <P>SOLUTION: A trench defines, on a reverse side of a thin-film layer, only a single partial region. The partial region substantially does not overlap with front-surface contact structure. On the reverse side, an electrical reverse-side contact is formed only in the partial region and the trench has inner walls, slanted with respect to a principal elongation surface of the thin-film layer for deflecting an electromagnetic beam. <P>COPYRIGHT: (C)2012,JPO&INPIT |
