发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent data collision at the time of continuous access to different ranks in a stacked semiconductor device classified into plural ranks. <P>SOLUTION: A semiconductor device includes: plural core chips CC0 to CC7 mutually stacked and each having a through electrode TSVW for transmitting write data and a through electrode TSVR for transmitting read data; and an interface chip IF connected to the core chips CC0 to CC7 in a common manner. The interface chip IF has a data input/output terminal 16, an input buffer 52 provided between the data input/output terminal and the through electrode TSVW, and an output buffer 51 provided between the data input/output terminal 16 and the through electrode TSVR. Since the write data and the read data are transmitted via the mutually different through electrodes in the present invention, continuous access to different ranks does not cause data collision. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012099162(A) 申请公布日期 2012.05.24
申请号 JP20100243144 申请日期 2010.10.29
申请人 ELPIDA MEMORY INC 发明人 KONDO TSUTOMU
分类号 G11C5/00;G06F12/06;G11C11/401;H01L21/3205;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L27/10 主分类号 G11C5/00
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