| 摘要 |
An atomic layer deposition method for forming a barrier layer over a thermoelectric device comprises providing a thermoelectric device in a reactor, introducing a pulse of a first precursor into the reactor, introducing a pulse of a second precursor into the reactor, introducing an inert gas into the reactor after introducing the first precursor and after introducing the second precursor, wherein the acts of introducing the first precursor and introducing the second precursor are repeated to form a barrier layer over exposed surfaces of the thermoelectric device.
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