发明名称 |
COMPOUND SEMICONDUCTOR DEVICE HAVING INSULATION FILM WITH DIFFERENT FILM THICKNESSES BENEATH ELECTRODES |
摘要 |
A compound semiconductor device includes a group-III nitride semiconductor layer; an insulation film located on the group-III nitride semiconductor layer; a drain electrode located in a position which is a first distance away from an upper surface of the group-III nitride semiconductor layer; a source electrode located in a position which is the first distance away from the upper surface of the group-III nitride semiconductor layer; a gate electrode located between the drain electrode and the source electrode; and a field plate electrode located between the drain electrode and the gate electrode at a position which is a second distance away from the upper surface of the group-III nitride semiconductor layer, the second distance is shorter than the first distance. |
申请公布号 |
US2012126287(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201113298705 |
申请日期 |
2011.11.17 |
申请人 |
AOKI HIRONORI;SANKEN ELECTRIC CO., LTD. |
发明人 |
AOKI HIRONORI |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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