STRAINED NANOWIRE DEVICES

摘要

Nanowire devices (7, 14, 25, 38, 40) are provided together with methods for forming such devices. The methods comprise forming a stressor layer (6, 13, 23, 33) circumferentially surrounding a semiconductor nanowire (1, 10, 20, 30). The methods are performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.