N-TYPE POLYCRYSTALLINE SILICON WAFER, N-TYPE POLYCRYSTALLINE SILICON INGOT AND METHOD OF MANUFACTURING SAME

摘要

PURPOSE: An N type polycrystalline silicon wafer, an N type polycrystalline silicon ingot, and a manufacturing method thereof are provided to improve conversion efficiency by suppressing the potential density of the polycrystalline silicon. CONSTITUTION: An n type polycrystalline silicon ingot is continuously casted by an electromagnetic casting method(S101). A plurality of silicon blocks are separated from the polycrystalline silicon ingot(S102). The silicon block is sliced with a preset thickness(S103). A polycrystalline silicon wafer is completed by controlling the flatness and thickness of a separated surface(S104).