| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid the problem that a metal stacked wiring is broken at a step portion by forming the metal stacked wiring in a state that there is substantially no step in a memory cell region and a peripheral circuit region and between these regions, and to reduce operation delay by resolving unbalanced operation of an NMOS transistor and a PMOS transistor constituting a sense amplifier. <P>SOLUTION: A semiconductor device comprises: a memory cell region and a peripheral circuit region on a semiconductor substrate; and a metal stacked wiring that extends across the memory cell region and the peripheral circuit region, constitutes bit lines in the memory region, and constitutes a portion of wiring for peripheral circuits and a portion of a gate electrode in the peripheral circuit region. The height of the bottom of the metal stacked wiring disposed in the memory cell region from the top surface of the semiconductor substrate is substantially the same as the height of the bottom of the metal stacked wiring disposed in the peripheral circuit region from the top surface of the semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
