| 发明名称 |
HIGH POWER, HIGH EFFICIENCY AND LOW EFFICIENCY DROOP III-NITRIDE LIGHT-EMITTING DIODES ON SEMIPOLAR SUBSTRATES |
| 摘要 |
A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.
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| 申请公布号 |
US2012126283(A1) |
申请公布日期 |
2012.05.24 |
| 申请号 |
US201113283259 |
申请日期 |
2011.10.27 |
| 申请人 |
ZHAO YUJI;SONODA JUNICHI;PAN CHIH-CHIEN;TANAKA SHINICHI;DENBAARS STEVEN P.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
ZHAO YUJI;SONODA JUNICHI;PAN CHIH-CHIEN;TANAKA SHINICHI;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L33/02 |
主分类号 |
H01L33/02 |
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