发明名称 |
METHOD FOR ADJUSTING FIN WIDTH IN INTEGRATED CIRCUITRY |
摘要 |
A method includes growing a plurality of parallel mandrels on a surface of a semiconductor substrate, each mandrel having at least two laterally opposite sidewalls and a predetermined width. The method further includes forming a first type of spacers on the sidewalls of the mandrels, wherein the first type of spacers between two adjacent mandrels are separated by a gap. The predetermined mandrel width is adjusted to close the gap between the adjacent first type of spacers to form a second type of spacers. The mandrels are removed to form a first type of fins from the first type of spacers, and to form a second type of fins from spacers between two adjacent mandrels. The second type of fins are wider than the first type of fins.
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申请公布号 |
US2012126325(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US20100952376 |
申请日期 |
2010.11.23 |
申请人 |
WANG CHIEN-HSUN;CHANG CHIH-SHENG;LIN YI-TANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIEN-HSUN;CHANG CHIH-SHENG;LIN YI-TANG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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