A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
申请公布号
US2012126353(A1)
申请公布日期
2012.05.24
申请号
US201213361406
申请日期
2012.01.30
申请人
NAM KYUNGTAE;CHOI SUKHUN;LEE JANGEUN;OH SECHUNG;JEONG JUNHO
发明人
NAM KYUNGTAE;CHOI SUKHUN;LEE JANGEUN;OH SECHUNG;JEONG JUNHO