发明名称 |
FIELD EFFECT TRANSISTORS WITH LOW K SIDEWALL SPACERS AND METHODS OF FABRICATING SAME |
摘要 |
Field effect transistors and method for forming filed effect transistors. The field effect transistors including: a gate dielectric on a channel region in a semiconductor substrate; a gate electrode on the gate dielectric; respective source/drains in the substrate on opposite sides of the channel region; sidewall spacers on opposite sides of the gate electrode proximate to the source/drains; and wherein the sidewall spacers comprise a material having a dielectric constant lower than that of silicon dioxide and capable of absorbing laser radiation. |
申请公布号 |
US2012126342(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US20100948805 |
申请日期 |
2010.11.18 |
申请人 |
CHENG KANGGUO;HSU LOUIS LU-CHEN;TONTI WILLIAM R.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HSU LOUIS LU-CHEN;TONTI WILLIAM R. |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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