发明名称 |
SEMICONDUCTOR DEVICE HAVING A SPLIT GATE AND A SUPER-JUNCTION STRUCTURE |
摘要 |
A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A super-junction structure is disposed within the drift region between the gate and the drain region. |
申请公布号 |
US2012126323(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US20100953200 |
申请日期 |
2010.11.23 |
申请人 |
WU SHYI-YUAN;CHAN WING CHOR;CHU CHIEN-WEN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU SHYI-YUAN;CHAN WING CHOR;CHU CHIEN-WEN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|