| 摘要 |
PURPOSE: A method for forming a buried metal line and a buried gate of a transistor is provided to reduce a resistance of a buried gate or buried metal line pattern by removing impurities included in a gate or metal line pattern to fill a trench. CONSTITUTION: An insulation pad(210) is formed on a semiconductor substrate to form a device isolation trench(101). A trench(110) is formed in a semiconductor substrate of an active area set by a device isolation layer(130). A gate dielectric layer(310) is formed on the sidewall and bottom of the trench. A first metal layer(330) is formed on the gate dielectric layer. A first metal layer is thermally processed.
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