| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device which includes a sidewall junction part is provided to minimize dopant loss during a post-treatment process such as a strip process by diffusing sidewall dopants to the inside. CONSTITUTION: A body(303) formed by etching a substrate is separated by a trench. A spacer which covers a liner film is formed on a sidewall of the body. A spacer(307) formed on a single sidewall of the spacer is removed. A sidewall contact which exposes a part of the sidewall of the body is formed by selectively eliminating a part of the liner film. A junction part(310A) is formed on the exposed sidewall of the body by performing a plasma doping process. A post-treatment process is performed in order to diffuse dopants to the inside of the body.
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