发明名称 |
SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE |
摘要 |
To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 in the silicon dioxide film, as measured by using secondary ion mass spectrometry (SIMS), a plasma CVD, which generate plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures and forms a film, is performed by setting the pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa and by using a gas of a compound composed of silicon atoms and chlorine atoms and an oxygen containing gas. |
申请公布号 |
US2012126376(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US200913121606 |
申请日期 |
2009.09.29 |
申请人 |
HONDA MINORU;NAKANISHI TOSHIO;KOHNO MASAYUKI;MIYAHARA JUNYA;TOKYO ELECTRON LIMITED |
发明人 |
HONDA MINORU;NAKANISHI TOSHIO;KOHNO MASAYUKI;MIYAHARA JUNYA |
分类号 |
H01L29/06;C23C16/511;C23C16/52;H01L21/316 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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