发明名称 MEMS SWITCH WITH REDUCED DIELECTRIC CHARGING EFFECT
摘要 The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.
申请公布号 US2012125747(A1) 申请公布日期 2012.05.24
申请号 US20100951492 申请日期 2010.11.22
申请人 CHU CHIA-HUA;LIN CHUNG-HSIEN;CHENG CHUN-WEN;TAIWAN SEMICONDUCTOR MANUFACTUING COMPANY, LTD. 发明人 CHU CHIA-HUA;LIN CHUNG-HSIEN;CHENG CHUN-WEN
分类号 H01H57/00;H01H11/00 主分类号 H01H57/00
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