| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of controlling a threshold voltage and improving a reliability of a semiconductor device without enlarging a circuit area after a LSI of a field effect transistor is manufactured. <P>SOLUTION: The field effect semiconductor device comprises a laminated layer (a first silicon oxide film 2 having a thickness of 3 nm to 4 nm, a silicon nitride film 3 having a thickness of 0.3 nm to 2 nm, a second silicon oxide film 4 having a thickness of 5 nm to 10 nm, a SOI layer 5 having a thickness of 3 nm to 20 nm) provided on an upper surface of a silicon semiconductor supporting substrate 1; source/drain diffusion layers 6 provided mutually oppositely via a predetermined gap on the structure; a gate insulating film 7 formed on a surface of the semiconductor substrate between the source diffusion layer and the drain diffusion layer; and a gate electrode 8 formed on the gate insulating film. By applying a voltage from the silicon supporting substrate 1, charges are kept in the silicon nitride film 3 in a certain time due to a direct tunnel effect, to control the threshold voltage. <P>COPYRIGHT: (C)2012,JPO&INPIT |
