发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a semiconductor chip with first and second low noise amplifier for amplifying an inputted signal. The chip is mounted over a wiring substrate which includes first and second electrodes and first, second and third GND electrodes. The wiring substrate includes first and second conductor patterns, wherein the first conductor pattern electrically connects the first and second GND electrodes and surrounds the first and second electrodes in a plan view. The second conductor pattern electrically connects the first conductor pattern and the third GND electrode to each other and is arranged between the first and second electrodes in the plan view. The first conductor pattern extends toward an inside of the semiconductor chip from the first and second GND electrodes in the plan view.
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申请公布号 |
US2012126900(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201213362076 |
申请日期 |
2012.01.31 |
申请人 |
DANNO TADATOSHI;NAGAMINE TORU;MORI HIROSHI;ICHINOSE TSUKASA |
发明人 |
DANNO TADATOSHI;NAGAMINE TORU;MORI HIROSHI;ICHINOSE TSUKASA |
分类号 |
H01L23/12;H03F3/04;H01L23/04;H01L23/31;H01L23/66;H01L25/04;H03G3/30 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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