| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the above-mentioned type power semiconductor module so as to simplify manufacturing, optimize heat radiation and electric insulation, and increase the current carrying capacity at the same time. <P>SOLUTION: The power semiconductor module has a substrate 102, at least one power semiconductor device 104, and at least one lead frame element 106. Further, the invention relates to a manufacturing method of the power semiconductor module 100. At least one of the joining between a first lead frame element and the power semiconductor device and the joining between the first lead frame element and the substrate includes sintered metal joining 110, preferably sintered silver joining. <P>COPYRIGHT: (C)2012,JPO&INPIT |
