| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a variation in the threshold voltage of a gate voltage and capable of reducing channel resistance. <P>SOLUTION: The impurity concentration of a base region 4, a source region 6, and a drain region 7 is set to be uniform, and a first and a second trenches 8a and 8b are formed shallower than the base region 4. In such a semiconductor device, since the impurity concentration of the base region 4, the source region 6, and the drain region 7 is set to be uniform, a variation in the threshold voltage of a gate voltage can be suppressed. Additionally, a channel region can be effectively used by deepening the source region 6 and the drain region 7, thereby reducing the channel resistance. Furthermore, since the first and second trenches 8a and 8b are formed shallower than the base region 4, the channel region is not formed in a portion that is formed deeper than the first and second trenches 8a and 8b in the base region 4, thereby preventing current from flowing toward the depth direction from the source region 6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
