发明名称 |
TONE INVERSION WITH PARTIAL UNDERLAYER ETCH |
摘要 |
A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
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申请公布号 |
US2012126358(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US20100952248 |
申请日期 |
2010.11.23 |
申请人 |
ARNOLD JOHN C.;BURNS SEAN D.;COLBURN MATTHEW E.;HOLMES STEVEN J.;YIN YUNPENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARNOLD JOHN C.;BURNS SEAN D.;COLBURN MATTHEW E.;HOLMES STEVEN J.;YIN YUNPENG |
分类号 |
H01L21/311;H01L21/768;H01L23/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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