发明名称 |
TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES |
摘要 |
Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.
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申请公布号 |
US2012125916(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201213363995 |
申请日期 |
2012.02.01 |
申请人 |
ASSEFA SOLOMON;GREEN WILLIAM M.;KIM YOUNG-HEE;VAN CAMPENHOUT JORIS;VLASOV YURII A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSEFA SOLOMON;GREEN WILLIAM M.;KIM YOUNG-HEE;VAN CAMPENHOUT JORIS;VLASOV YURII A. |
分类号 |
H05B6/02;H01L21/329;H01L29/66 |
主分类号 |
H05B6/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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