SEMICONDUCTOR WAFER COMPRISING GALLIUM NITRIDE LAYER HAVING ONE OR MORE SILICON NITRIDE INTERLAYER THEREIN

摘要

The present invention provides a semiconductor wafer comprising: a substrate layer; and a first GaN layer having one or more SiNx interlayers therein; and wherein in the first GaN layer at least one SiNx interlayer has GaN penetrated through one or more portions of said SiNx interlayer and preferably has a thickness of from 0.5 to 10nm.