PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF
摘要
The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomelic unit having a pendant acid labile moiety and a second monomelic unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.
申请公布号
WO2012067755(A2)
申请公布日期
2012.05.24
申请号
WO2011US57245
申请日期
2011.10.21
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHEN, KUANG-JUNG;LIU, SEN;HUANG, WU-SONG;LI, WAI-KIN