发明名称 VARIABLE DEPOSITION RATE CONTROLLED SPUTTERING SYSTEM BASED ON MONITORING THE TEMPERATURE OF DEPOSITIONG PROCESS ATMOSPHERE
摘要 PURPOSE: A deposition rate-variable sputtering system by monitoring the temperature in the atmosphere of thin film manufacture is provided to improve the property of a thin film and processes since a temperature monitoring system measures the temperature of a thin film and the atmosphere in the manufacture of the thin film. CONSTITUTION: A deposition rate-variable sputtering system by monitoring the temperature in the atmosphere of thin film manufacture comprises a thin film temperature measuring unit(40), a chamber gas temperature measuring unit(50), and a substrate temperature measuring unit(60). The thin film temperature measuring unit measures the temperature of a thin film(20). The chamber gas temperature measuring unit measures the temperature of residual gas inside a chamber(C). The substrate temperature measuring unit measures the temperature of a substrate(10). A through-hole(41) is formed on one between the top and the bottom of a chamber. A sight glass(42) is formed in order to enable an operator to see the thin film through the through-hole.
申请公布号 KR101144123(B1) 申请公布日期 2012.05.24
申请号 KR20090109313 申请日期 2009.11.12
申请人 发明人
分类号 C23C14/34;H01L21/203 主分类号 C23C14/34
代理机构 代理人
主权项
地址