| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device capable of satisfying reliability characteristics and optical characteristics. <P>SOLUTION: A nitride semiconductor laser device 100 comprises: a first semiconductor layer formed on a substrate; an active layer formed above the first semiconductor layer; a second semiconductor layer that is formed above the active layer and has a ridge portion and flat portions; a first electrode formed above the ridge portion; and a dielectric film formed so as to extend from the sidewall portions to the flat portions of the ridge portion. Additionally, when a region from a front end face 100a to a predetermined position between the front end face 100a and a rear end face 100b is a region A, and a region from the predetermined position to the rear end face 100b is a region B, a thickness H<SB POS="POST">A</SB>of the ridge portion exposed from the dielectric film in the region A is thicker than a thickness H<SB POS="POST">B</SB>of the ridge portion exposed from the dielectric film in the region B. In at least the region A, the first electrode contacts the ridge portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
