| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is optimized in performance by a plurality of thin-film FETs arranged to be identical to each other in polarity, but different in threshold voltage. <P>SOLUTION: The semiconductor device has: a semiconductor substrate 1; an embedded dielectric film 2 provided on the semiconductor substrate 1; an n-type thin-film FET 100 formed on the embedded dielectric film 2; a p-type thin-film FET 101 formed on the embedded dielectric film 2; an n-type thin-film FET 100b formed on the embedded dielectric film 2; a p-type well region 4 provided in the semiconductor substrate 1 to overlap with a channel region 8 of the n-type thin-film FET 100 in plan view; a p-type well region 5 provided in the semiconductor substrate 1 to overlap with a channel region 8 of the p-type thin-film FET 101 in plan view; a p-type well region 4b provided in the semiconductor substrate 1 to overlap with a channel region 8 of the n-type thin-film FET 100b in plan view; and an n-type well region 40 surrounding the p-type well regions 4, 4b and 5. In the semiconductor device, the p-type well regions 4, 4b and 5 are out of contact with each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
