| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the occurrence of an increase in on-resistance due to current collapse when switching under high temperature and high voltage, in a nitride semiconductor device. <P>SOLUTION: A buffer layer 2, a channel layer 3 composed of GaN, and a barrier layer 4 composed of undoped AlGaN are sequentially formed on a substrate 1. The channel layer 3 has a p-type impurity layer 3a at the lower portion thereof and has an undoped layer 3b on the p-type impurity layer 3a. The edges of the barrier layer 4 and the channel layer 3 are removed, and a source electrode 5 and a drain electrode 6 are provided so as to contact each side surface of the exposed barrier layer 4 and the channel layer 3. A gate electrode 7 is provided in the region between the source electrode 5 and the drain electrode 6 on the barrier layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
